ABB asymmetric thyristor integrated gate commutated thyristor (IGCT) represents the technical peak of high-power semiconductor devices, and is specially designed for high-voltage direct current (HVDC) and industrial drive applications. As a revolutionary substitute of traditional GTO thyristor, IGCT technology combines the high voltage and high current characteristics of thyristor with the high-speed switching performance of transistor.
Monolithic integrated structure: the gate drive unit and thyristor are monolithically integrated.
Asymmetric voltage blocking: Optimize forward blocking capability (6kV-9kV typical)
Transparent anode technology: significantly reduce on-state loss
Cathode short circuit design: improve the tolerance of di/dt (up to 6kA/μs).
-Customized cooling solution
-System-level EMC design support
-Failure analysis and reliability evaluation
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